Photovoltaic Properties of Bismuth Vanadate/Bismuth Ferrite Heterostructures Prepared by Spin Coating
Document Type
Article
Publication Date
1-1-2025
Abstract
This study investigates the photovoltaic performance of bismuth vanadate (BiVO4)/bismuth ferrite (BiFeOs) heterostructures. By varying the pre-annealing temperature of the BiVO4 layer, we have achieved the significant enhancement in the open-circuit voltage (Voc) with the spontaneous formation of the polarized Bi4V2O11 interfacial layer. X-ray diffraction analysis confirms a pure rhombohedral distorted perovskite structure for BiFeOs and a monoclinic crystallographic nature for BiVO4. SEM analysis exhibits a porous structure with small spherical grains in the BiVO4 layer, with the dense and smooth surface of the BiFeOs layer. The heterostructures observed in a red-shifted absorption edge are compared with the individual materials, which indicates an improved light absorption. Tauc plot analysis has yielded the direct bandgap values of 1.88 eV and 1.83 eV for the BiVO4 annealing temperatures at 150 and 500 degrees C, respectively. The overall power conversion efficiency (eta) has remained low at 0.003 % and 0.005 %, demonstrating the potential of interfacial engineering to optimize the photovoltaic properties of BiVO4/BiFeOs heterostructures.
Keywords
BiVO4, BiFeO3, Nanostructure, p-n junction, Solar cell
Divisions
nanotechnology
Publication Title
Ceramics International
Volume
51
Issue
1
Publisher
Elsevier
Publisher Location
125 London Wall, London, ENGLAND