Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells
Document Type
Article
Publication Date
1-1-2024
Abstract
Solid-state ultra-violet light emitting diodes (UV-LEDs) based on aluminium gallium nitride (AlGaN) semiconductors have drawn considerable attention because their energy can be tuned from 3.4 eV (GaN) to 6.2 eV (AlN) by changing Al content. Subsequently, AlGaN-based UV-LEDs with a full wavelength coverage of UV spectral range (400-200 nm) can be fabricated. However, their external quantum efficiency, especially the deep UV-LEDs, is still much lower than commercially available blue LEDs. To improve the efficiency of the AlGaN-based deep UV-LEDs, the effects of the thicknesses, pairings, and Al composition of quantum wells (QWs) are examined using self-consistent simulation software. The normalised simulation results show that the emission wavelength is blue shifted as the Al composition increased in single quantum well (SQW) UV-LEDs. The simulation also assessed the effect of SQWs configuration and discovered that changing the SQWs' thickness leads to considerable variance in device power in a log scale.
Keywords
quantum well, AlGaN, aluminium gallium nitride, deep ultraviolet, LEDs, light emitting diodes, self-consistent simulation software
Divisions
PHYSICS
Funders
Ministry of Higher Education Malaysia via the Higher Education Center of Excellence (HICoE), Institute of Nano Optoelectronics Research and Technology (INOR) (A305-KR-AKH002-0000000435-K134),Universiti Sains Malaysia, Research University Individual (RUI) Special Grant Scheme (1001/CINOR/8011141); (UO2027); (2022/0031)
Publication Title
International Journal of Nanotechnology
Volume
21
Issue
4-5
Publisher
Inderscience
Publisher Location
WORLD TRADE CENTER BLDG, 29 ROUTE DE PRE-BOIS, CASE POSTALE 856, CH-1215 GENEVA, SWITZERLAND