A 54 μW CMOS auto-trimming bandgap references (ATBGR) achieving 90 dB PSRR for artificial intelligence of things (AIoT) chips
Document Type
Article
Publication Date
9-1-2023
Abstract
An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.65 V to 4.5 V. An auto-trimming circuit is integrated into a PTAT resistor of BGR to minimize the influences of the process variations. The four parallel resistor pairs with PMOS switches are connected in series with the PTAT resistor. The reference voltage, VREF, is compared to an external constant value, 1.25 V, through an operational amplifier, and the output of the de-multiplexer is used to configure the PMOS switches. High power supply rejection is achieved through a PSRR enhancement circuit constituting a cascaded PMOS common gate pair. The ATBGR circuit is fabricated in 180 nm CMOS technology, consuming an area of 0.03277 mm2. The auto-trimming method yields an average temperature coefficient of 9.99 ppm/degrees C with temperature ranges from -40 degrees C to 125 degrees C, and a power supply rejection ratio of -90 dB at 100 MHz is obtained. The line regulation of the proposed circuit is 0.434%/V with power consumption of 54.12 mu W at room temperature.
Keywords
Bandgap voltage reference (BGR), Power supply rejection ratio (PSRR), Artificial intelligence and Internet of Things (AIoT), CMOS
Divisions
sch_ecs
Funders
CEDEC,Fundamental Research Grant Scheme [Grant no. FRGS/1/2019/TK04/USM/02/14],Ministry of Higher Education, Malaysia,Universiti Sains Malaysia
Publication Title
Micromachines
Volume
14
Issue
9
Publisher
MDPI
Publisher Location
MDPI AG, Grosspeteranlage 5, CH-4052 BASEL, SWITZERLAND