A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
Document Type
Article
Publication Date
1-1-2023
Abstract
A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 mu A with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm(2) and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 mu W in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes.
Keywords
Multi-voltage domain low dropout, Radio frequency energy harvester, Power management unit, Bandgap voltage reference, System on chip, Internet of things, Feedback network, Demultiplexer
Divisions
sch_ecs
Funders
Malaysian Ministry of Higher Education's Fundamental Research Grant Scheme (FRGS/1/2019/TK04/USM/02/14),CREST Malaysia (PCEDEC/6050415)
Publication Title
Micromachines
Volume
14
Issue
2
Publisher
MDPI
Publisher Location
ST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND