Electrode dependence in halide perovskite memories: Resistive switching behaviours
Document Type
Article
Publication Date
10-1-2022
Abstract
Halide perovskites (HPs) are widely employed in a variety of applications including optoelectronics, lasers, light-emitting diodes, and photovoltaics. As HPs are superb semiconductors with remarkable electronic and light absorption characteristics, global research into these materials is flourishing in various industries. Thus, memory devices have lately seen a growth in the usage of HPs as a next-generation candidate for high-performance memories. Nonetheless, understanding the impact of design structure on HP memories, such as electrode dependence in producing different resistive switching (RS) properties, is critical in optimizing the design process. This review describes the top electrode (TE) dependence of various materials in creating diverse RS memory behaviour. The disparities in all recently reported RS characteristics based on different TE materials are addressed and explored. Current electrode modification advances and techniques in HP RS devices are also discussed. Through this, the relevance and importance of electrode dependence in the design architecture of HP memories toward RS mechanisms are highlighted in this review work.
Keywords
Solar-cells, Memristive devices, Enhanced endurance, Performance
Divisions
Science
Funders
Multimedia University Postdoctoral Research Fellow Grant [MMUI/220123],SATU Joint Research Scheme [ST002-2021],Universiti Malaya Impact-Oriented Interdisciplinary Research Grant Programme [IIRG007B-19FNW],Universiti Tenaga Nasional (UNITEN) BOLD Grant [J5150050002/20021170]
Publication Title
Materials Chemistry Frontiers
Volume
6
Issue
21
Publisher
Royal Soc Chemistry
Publisher Location
THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND