Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
Document Type
Conference Item
Publication Date
2-1-2021
Abstract
Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, respectively. Depending on the type of dopant and substitution site, the semiconducting characteristic of the 2D GaN can be changed into metallic. Similarly, magnetism can be induced on the 2D GaN with the total magnetization varied from 0.5 mu B to 1.46 mu B.
Keywords
Electronics, Gallium Nitride, Magnetism, Density-functional theory (DFT)
Divisions
PHYSICS
Funders
University of Southern Maine,Universiti Malaya,Ministry of Higher Education, Malaysia [Grant No: FRGS/1/2017/STG07/UTAR/02/2]
Volume
2332
Event Title
4th International Sciences, Technology and Engineering Conference: Exploring Materials for the Future, ISTEC 2020
Event Location
Arau, Virtual
Event Dates
8 October 2020
Event Type
conference
Additional Information
4th International Sciences, Technology and Engineering Conference (ISTEC) - Exploring Materials for the Future, ELECTR NETWORK, OCT 08, 2020