CMOS low power current source based tunable inductor for IoT devices
Document Type
Conference Item
Publication Date
1-1-2020
Abstract
This paper proposes a novel tunable inductor (TI) with integrated miniature low power current source tuner (LPCST). It is fabricated in CMOS 180 nm. In proportion to the tuner voltage, the physical inductance value can be increased up to 80% from its default value. The increasing inductance value is beneficial since a small inductor can be utilized to achieve high inductance value. Integration of the tuner to a physical inductor of 1.2 nH increases the inductance value up to 2.2 nH at 2.5 GHz contributing to an area reduction of 52%. The TI has been integrated to a single stage CMOS IoT PA and tested. The tunability property of the TI allows the performance of the IoT PA to be adjusted and makes it resilient to process variations, thus enhances reliability and production yield.
Keywords
Tunable inductor, Low power current source tuner, CMOS, Power amplifier, IoT
Divisions
sch_ecs
Publisher
IEEE
Publisher Location
345 E 47TH ST, NEW YORK, NY 10017 USA
Event Title
IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Event Location
Online
Event Dates
16-18 March 2020
Event Type
conference
Additional Information
IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online, Mar 16-18, 2020