Document Type
Article
Publication Date
1-1-2013
Abstract
Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.
Keywords
Mg doped GaN, PL, I-V, Annealing temperature
Divisions
PHYSICS
Publication Title
Advanced Materials Research
Volume
620
Publisher
Trans Tech Publications, Switzerland
COinS