Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications
Document Type
Article
Publication Date
1-1-2006
Abstract
Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 degrees C. The room temperature electrical resistivity of 4.6 x 10(-3) Omega cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies. (c) 2006 Elsevier Ltd. All rights reserved.
Keywords
Optical properties of specific thin films, electrical properties of specific thin films
Divisions
CHEMISTRY
Publication Title
Journal of Physics and Chemistry of Solids
Volume
67
Issue
8
Additional Information
Department of Chemistry, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA