Nanocrystalline silicon thin films by RF plasma enhanced chemical vapour deposition

Authors

• S.C. Han
• G.B. Tong
• R. Richard
• G.S. Meriam Ab
• M.M. Rasat
• S.A. RahmanFollow

Document Type

Article

Publication Date

1-1-2006

Abstract

A plasma enhanced chemical vapour deposition (PECVD) system was designed and built in-house for the deposition of nanocrystalline silicon thin films. In this work, nanocrystalline slicon thin films were deposited at different rf(radio-frequency) power with the silane to hydrogen partial pressure ratio fixed. X-ray diffraction (XRD) and Raman spectroscopy measurements were done to investigate the structural properties of the films. Optical transmittance measurements were carried out to determine various optical parameters of these films. The rf power showed strong influence on the structural and optical properties of the nanocrystalline silicon films produced.

Keywords

PECVD, nanocrystalline silicon thin films.

Publication Title

Jurnal Fizik Malaysia

ISSN

0128-0333

Recommended Citation

Han, S.C.; Tong, G.B.; Richard, R.; Meriam Ab, G.S.; Rasat, M.M.; and Rahman, S.A., "Nanocrystalline silicon thin films by RF plasma enhanced chemical vapour deposition" (2006). Research Publications (2006 to 2010). 106.
https://knova.um.edu.my/research_publications_2006_2010/106

Divisions

PHYSICS

Volume

27

Issue

3 & 4