Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations

Author

• Yu Li Ming, Universiti MalayaFollow

Date of Award

2-1-2021

Thesis Type

Masters

Document Type

Dissertation

Divisions

Faculty of Engineering

Department

Department of Electrical Engineering

Institution

Universiti Malaya

Abstract

A dual-band selection of Doherty power amplifier employing a Reactance Compensation Technique (RCT) with Gallium Nitride High-Electron-Mobility-Transistor (GaN HEMT) technology is presented. In this dissertation, the focus has been given to the design power amplifier in Doherty configuration, where it can operate at dual-band frequency and enhanced performances at 6 dB back-off from saturation power. This project applied lossy matching circuit for the input matching network and incorporated the primary motivation of using RCT and third harmonic tuning for the output matching network. The DPA designed can achieve satisfying results for the frequency of 0.8 and 2.1 GHz. The implementation is suitable for two-way radio application, particularly for LTE frequency operation. The results of the proposed concept are validated through simulation by using Advanced Design System (ADS). The measured results of the prototype board report accepted performance over the desired frequency. (ie. the maximum power level of 40.5 dBm, 6 dB back-off efficiency of 43% and 47% and gain of 10 dB approximately at 0.8 GHz and 2.1 GHz, respectively).

Initial

maa

Additional Information

Dissertation (M.A.) - Faculty of Engineering, Universiti Malaya, 2021.

Recommended Citation

Li Ming, Yu, "Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations" (2021). Student Works (2020-2029). 651.
https://knova.um.edu.my/student_works_2020s/651

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 4.0 International License.