Date of Award
8-1-2018
Thesis Type
masters
Document Type
Thesis (Restricted Access)
Divisions
science
Department
Faculty of Science
Institution
University of Malaya
Abstract
The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED architectures (short process flow) and overall lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum wells with InGaN quantum wells and GaN quantum barriers were grown at different temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm
Note
Dissertation (M.A.) – Faculty of Science, University of Malaya, 2018.
Recommended Citation
Sivanathan, Pariasamy @ Chelladurai, "Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai" (2018). Student Works (2010-2019). 5764.
https://knova.um.edu.my/student_works_2010s/5764