Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen
Date of Award
7-1-2018
Thesis Type
masters
Document Type
Thesis (Restricted Access)
Department
Faculty of Engineering
Institution
University Of Malaya
Abstract
Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C.
Note
Research Report (M.A.) - Faculty of Engineering, University of Malaya, 2018.
Recommended Citation
Soh, Wee Chen, "Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen" (2018). Student Works (2010-2019). 5686.
https://knova.um.edu.my/student_works_2010s/5686