A 0.1-V V-IN subthreshold 3-stage dual-branch charge pump with 43.4% peak power conversion efficiency using advanced dynamic gate-bias
Document Type
Article
Publication Date
9-1-2022
Abstract
This brief proposes a 3-stage dual-branch charge pump (CP) with an advanced dynamic gate-biasing technique (DGB) enabling ultra-low-voltage (0.1 V) energy harvesting. Specifically, we reduce the forward conduction loss and the reverse current leakage loss with the combination of an advanced DGB and an NMOS-PMOS dual-switch transistor pair. Also, we investigate the relationship between the pumping capacitance and the power conversion efficiency (PCE) of the CP, thus guiding the PCE improvement with minimal capacitance. The prototype fabricated in 65-nm CMOS achieves a 43.4% PCE at a 0.1-V input voltage.
Keywords
Logic gates, Switches, Control systems, Transistors, Voltage, Voltage control, Switching circuits, Cross-coupled charge pump (CCCP), CMOS, Energy harvesting (EH), Power conversion efficiency (PCE)
Divisions
fac_eng
Funders
Collaborative Research in Engineering, Science and Technology Center (CREST) Program [T05C2-19(PV026-2020)]
Publication Title
IEEE Transactions on Circuits and Systems II-Express Briefs
Volume
69
Issue
9
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Publisher Location
445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA