Cubic Silicon Carbide (3C-SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
Document Type
Article
Publication Date
1-1-2022
Abstract
Cubic Silicon Carbide (3C-SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C-SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C-SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C-SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation.
Keywords
CdTe, 3C-SiC, Potential buffer layer, High stability, Light intensity
Divisions
sch_ecs
Funders
Centennial Research Grant, University of Dhaka
Publication Title
Optical Materials
Volume
123
Publisher
Elsevier
Publisher Location
RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS