Cubic Silicon Carbide (3C-SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell

Document Type

Article

Publication Date

1-1-2022

Abstract

Cubic Silicon Carbide (3C-SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C-SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C-SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C-SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation.

Keywords

CdTe, 3C-SiC, Potential buffer layer, High stability, Light intensity

Publication Title

Optical Materials

Divisions

sch_ecs

Funders

Centennial Research Grant, University of Dhaka

Volume

123

Publisher

Elsevier

Publisher Location

RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS

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