Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
Document Type
Article
Publication Date
1-1-2022
Abstract
The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin film thickness was observed decrease with the increase of sputtering pressure. AFM analysis shows the lowest surface roughness at 0.84 nm for 5 mTorr sputtering pressure. Impedance spectroscopy analysis of Al/100-plane AlN/Si MIS structure shows the electrical conductivity of AlN was directly proportional to the sputtering pressure and stable with temperature ranging from room temperature (299 K) to 353 K. Good dielectric stability was achieved at 3 mTorr sputtering pressure for all variation temperature and the dielectric constant calculated at average 3.5.
Keywords
Aluminium nitride, conductivity, Dielectric, HiPIMS, impedance, Magnetron sputtering, Metal-insulator-semiconductor, MIS, Properties, Thin film
Divisions
PHYSICS
Funders
Universiti Tun Hussein Onn Malaysia,Collaborative Research in Engineering, Science and Technology Centre [Grant no. P28C1-17]
Publication Title
International Journal of Nanotechnology
Volume
19
Issue
2-5
Publisher
Inderscience Enterprises Ltd
Publisher Location
WORLD TRADE CENTER BLDG, 29 ROUTE DE PRE-BOIS, CASE POSTALE 856, CH-1215 GENEVA, SWITZERLAND