Improvement of N-ZnO chemiresistive gas sensor toward lower detection limit of acetone and ethanol at low operating temperature
Document Type
Article
Publication Date
11-15-2021
Abstract
Nitrogen doped ZnO (N-ZnO) chemiresistive gas sensor was fabricated to improve lower limit of detection (LLOD). N-ZnO was fabricated by mixing ZnO with urea using ball milling method followed by annealing. Both pure ZnO and N-ZnO possess porous morphology. N-ZnO sensor showed a more improved LLOD (20 ppm) toward acetone and ethanol compared to the pure ZnO (LLOD = 1000 ppm) at 150 degrees C which is the lower limit of working temperature for both of the samples. A new understanding on interchangeable n-type and p-type behaviour of NZnO upon exposure to different acetone concentrations was also discussed in this paper.
Keywords
ZnO, Sensor, Lower limit of detection, Doping, Semiconductor
Divisions
fac_eng
Publication Title
Materials Letters
Volume
303
Publisher
Elsevier
Publisher Location
RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS