Improvement of N-ZnO chemiresistive gas sensor toward lower detection limit of acetone and ethanol at low operating temperature
Document Type
Article
Publication Date
11-15-2021
Abstract
Nitrogen doped ZnO (N-ZnO) chemiresistive gas sensor was fabricated to improve lower limit of detection (LLOD). N-ZnO was fabricated by mixing ZnO with urea using ball milling method followed by annealing. Both pure ZnO and N-ZnO possess porous morphology. N-ZnO sensor showed a more improved LLOD (20 ppm) toward acetone and ethanol compared to the pure ZnO (LLOD = 1000 ppm) at 150 degrees C which is the lower limit of working temperature for both of the samples. A new understanding on interchangeable n-type and p-type behaviour of NZnO upon exposure to different acetone concentrations was also discussed in this paper.
Keywords
ZnO, Sensor, Lower limit of detection, Doping, Semiconductor
Publication Title
Materials Letters
Recommended Citation
Baharuddin, Aainaa Aqilah; Ang, Bee Chin; Haseeb, A. S. M. A.; and Wong, Yew Hoong, "Improvement of N-ZnO chemiresistive gas sensor toward lower detection limit of acetone and ethanol at low operating temperature" (2021). Research Publications (2021 to 2025). 7547.
https://knova.um.edu.my/research_publications_2021_2025/7547
Divisions
fac_eng
Volume
303
Publisher
Elsevier
Publisher Location
RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS