Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices
Document Type
Article
Publication Date
11-1-2021
Abstract
In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure-property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d(33) was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.
Keywords
Piezoelectric thin film, Scandium-doped aluminum nitride, Crystal structure, First-principles calculation
Divisions
PHYSICS
Funders
National Natural Science Foundation of China (NSFC) [11904233],National Natural Science Youth Foundation of China [52172005],cience & Technology Commission of Shanghai Municipality (STCSM) [19070502800]
Publication Title
Materials
Volume
14
Issue
21
Publisher
MDPI
Publisher Location
ST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND