The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
Document Type
Article
Publication Date
8-15-2021
Abstract
The properties of non-polar m-plane GaN layers grown on m-plane sapphire substrate using metal organic chemical vapor deposition at different disilane (Si2H6) and bis(cyclopentadienyl)magnesium (Cp2Mg) flow rates were investigated. The surface morphologies for Si- and Mg-doped of m-plane GaN exhibit root mean square of 1.22 and 2.95 nm, respectively. Using x-ray diffraction method, the epi-layer properties of doped m-GaN layers were studied emphasizing on the disilane and Cp2Mg flow rates towards the effect on threading dislocations and basal stacking faults. Room temperature Hall measurement indicate the maximum respective electron and hole concentration of -1.88 x 1018 cm-3 and 6.50 x 1017 cm-3 were achieved at higher flow rate as well as the mobility of the electron. However, the mobility of hole was recorded to be low of -5.2 cm2/V at higher Cp2Mg flow rates. The implementation of optimized n- and p-type contact layer demonstrate a 483 nm non-polar LED with light output power -0.2 mW and forward voltage of 4.8 V at 20 mA current injection.
Keywords
m-plane GaN, m-sapphire, P-type, N-type, MOCVD
Divisions
PHYSICS
Funders
Malaysia Ministry of Education (MOE) under LongTerm Research Grant (LRGS) [LR001-2016A (um.0000021/HME.LS)],University Malaya Research Grant (UMRG) [RP039A-18AFR],University Malaya Postgraduate Research Grant [PG1172015B],Core Research for Evolutional Science and Technology (CREST) [PVD15-2015]
Publication Title
Materials Science in Semiconductor Processing
Volume
131
Publisher
Elsevier
Publisher Location
THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND