Indium alloying in ε-Ga2O3 for polarization and interfacial charge tuning
Document Type
Article
Publication Date
1-1-2025
Abstract
Density functional theory was utilized to assess the influence of In alloying on the spontaneous (P-sp) and piezoelectric (P-pe) polarization of epsilon-Ga2O3 heterostructures with In concentrations ranging from 0% to 50%. The analysis demonstrated a decrease in both P-sp and P-pe with an increase in In concentration, described by the equations P-sp = -9.5947x + 24.81 and P-pe = -0.6217x (where x represents the In concentration, with units in mu C/cm(2)). Additionally, the polarization-induced two-dimensional electron gas (2DEG) density within epsilon-InGaO/epsilon-Ga2O3 heterostructures was examined using a one-dimensional Schr & ouml;dinger-Poisson solver. An inverse correlation was observed between 2DEG density and epitaxial thickness across all undoped In-alloyed samples. Furthermore, achieving high 2DEG densities (exceeding 10(13) cm(-2)) is significantly facilitated by n-type doping concentrations above 10(17) cm(-3) in epsilon-InGaO. These insights not only augment the understanding of polarization effects in epsilon-Ga2O3 heterostructures but also provide a strategic framework for enhancing 2DEG density in epsilon-Ga2O3-based devices, which offers significant potential for advancing epsilon-Ga2O3-based high electron mobility transistors for power and RF applications.
Divisions
mechanical
Funders
State Administration of Foreign Experts Affairs10.13039/501100003512,Hong Kong University of Science and Technology (Guangzhou) (QN2022030022L),State Administration of Foreign Experts Affairs China (2023A03J0003) ; (2023A03J0013) ; (2023A04J0310),Guangzhou Municipal Science and Technology Project (2022SLABFN02),Songshan Lake Materials Laboratory,Green e Materials Laboratory at The Hong Kong University of Science and Technology (Guangzhou)
Publication Title
Applied Physics Letters
Volume
126
Issue
2
Publisher
AIP Publishing
Publisher Location
1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA