Replication advancements review in ultraviolet GaN/AlGaN quantum well light emitting diodes: engineering, simulation and validation
Document Type
Article
Publication Date
12-1-2024
Abstract
This paper presents a comprehensive study on the replication of ultraviolet (UV) GaN quantum well light emitting diodes (LEDs) based on Han et al's experimental work. The replication structures of the electroluminescence emission at 353.6 nm with a narrow 5.8 nm linewidth validated the reliability of the simulation model. However, during the simulation run, a surprising and significant peak shift was observed, resulting in an emission peak at 358.6 nm, which deviated from the reported value. This discrepancy necessitates further investigations to understand the factors responsible for this unexpected change. Nonetheless, this correlation remains crucial as a benchmark for evaluating potential quantum well and device performance enhancements by following the existing structure and composition. Ultimately, it improves learning progress in scientific studies to the quantum level. Remarkably, the optimized devices exhibited exceptional stability at high current densities and demonstrated the efficacy of Drift-diffusion Charge Control (DDCC) solver simulation, which advances UV-LED technology, tallying with the literature claims and indirectly paving the way for high-performance applications.
Keywords
AlGaN, Ultraviolet light emitting diodes (UV-LEDs), drift-diffusion charge control (DDCC) solver simulation, spontaneous, nitride-based
Divisions
PHYSICS
Funders
Universiti Sains Malaysia, Research University Individual (RUI) Special Grant Scheme,Ministry of Education, Malaysia,Higher Education Center of Excellence (HICoE), Institute of Nano Optoelectronics Research and Technology (INOR) (A305-KR-AKH002-0000000435-K134) ; (:1001/CINOR/8011141) ; (UO2027) ; (2022/0031)
Publication Title
Physica Scripta
Volume
99
Issue
12
Publisher
IOP Publishing
Publisher Location
TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND