Low operating temperature N-ZnO/PANI chemiresistive acetone gas sensor
Document Type
Article
Publication Date
1-1-2024
Abstract
In the advances of electronic miniaturization, a power efficient wireless gas sensor is desirable. In order to reduce gas sensor working temperature and improve lower limit of detection (LOD) as well as increase response toward acetone gas in this study, ZnO was first synthesized into porous nanosheet network before it was in-situ ball-milled and nitrogen (N) doped, followed by mixing with polyaniline (PANI). Ultimately, the N-ZnO was combined with PANI into composites of 5 wt%, 10 wt%, and 20 wt% of PANI to N-ZnO in order to scrutinize the effects of combining different weight percent of nitrogen-doped ZnO (N-ZnO) to PANI. Investigation on morphology of sample using X-ray diffractometer found that in-situ ball milling and nitrogen doping had induced lattice strain to the ZnO morphology. The rise in carrier concentration in N-ZnO could be the advantageous feature that enhanced the sensor LOD which also promptly decreased the working temperature. On the other hand, the increased in acetone response of the sensor is due to the heterojunction of N-ZnO/PANI composite.
Keywords
OPTICAL-PROPERTIES, ZNO, PERFORMANCE, NANOFIBERS, PHASE
Divisions
fac_eng,sch_che,mechanical
Funders
Universiti Malaya [FRGS/1/2019/TK05/UM/02/2],Ministry of Higher Education (MOHE) Malaysia via Fundamental Research Grant Scheme [ST009-2022],GPF060B-2020,Universiti Malaya (UM) via International Collaboration Grant,UMSFA 2019
Publication Title
Journal of Materials Science: Materials in Electronics
Volume
35
Issue
1
Publisher
Springer
Publisher Location
VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS