Analysis of the reaction layer formed during Sapphire-Sapphire brazing using a Ag-Cu-Ti filler metal for gas-pressure sensors

Document Type

Article

Publication Date

5-1-2022

Abstract

The present research paper introduces a reliable and economical method for direct brazing using an active Ag-Cu-Ti filler metal that can ensure effective brazing. The sapphire-sapphire brazing process has been conducted at temperatures in the range of 830-900 degrees C for durations in the range of 15-30 min in a high-vacuum (10(-4) Pa) furnace. Material and microstructural characterization involved the use of scanning electron microscope-energy-dispersive system (SEM-EDS) and transmission electron microscope (TEM) for investigating the bonding joint morphologies. Two uniform reaction layers were observed to have formed at the sapphire/brazed area interface. On the sapphire side, the first reaction layer, which was uniform and had a thickness in the range of 0.13-0.17 mu m, was identified as a TiO phase, whereas the second layer was identified as a Cu3Ti3O phase with a thickness in the range of 1.72-2.43 mu m. The uniformity of the Cu3Ti3O phase was found to decrease with increasing brazing temperature and time. Therefore, in this research, a lower brazing temperature and time (830 degrees C/15 min) were chosen so as to avoid bonding degradation.

Keywords

Sapphire, Characterization, Joining, Scanning electron microscopy, Transmission electron microscopy

Publication Title

ACS Applied Electronic Materials

Divisions

mechanical

Funders

Universiti Malaya (GPF063A-2018),Ministry of Higher Education (MoHE), Malaysia (UM/MOHEUM.C/625/1/HIR/MOHE/H16001-D000001)

Volume

4

Issue

5

Publisher

Amer Chemical Soc

Publisher Location

1155 16TH ST, NW, WASHINGTON, DC 20036 USA

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