Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
Document Type
Article
Publication Date
1-1-2024
Abstract
AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of AlGaN/GaN MOSHEMTs. This research investigates the trapping effects of technology computer aided design (TCAD), device simulation on ``Silvaco'' Software. Thus, it is obverse that changing the donor or acceptor traps density with trap energy at the HfAlO/AlGaN interface, which impacts the ID vs. VGS, ID vs. VDS, and transconductance characteristics curve. Moreover, it also influences the interface charge, 2DEG density, and Threshold Voltage (VTH). On the contrary, varying donor or acceptor trap energy does not illustrate a significant impact on the characteristics curve because both donor and acceptor traps are fully ionised. Eventually, it is summarised that the I vs. V characteristics curve of the AlGaN/GaN, MOSHEMT, is highly influenced by the effective positive charge density at the HfAlO/AlGaN interface.
Keywords
GaN, metal oxide semiconductor high electron mobility transistors, MOSHEMT, HEMT, high electron mobility transistor, trap, density, TCAD, technology computer aided design, characteristics curve, power devices, semiconductor devices, wide bandgap
Divisions
PHYSICS
Funders
Universiti Sains Malaysia Research University Incentive (RUI) (1001/PELECT/8014134)
Publication Title
International Journal of Nanotechnology
Volume
21
Issue
4-5
Publisher
Inderscience
Publisher Location
WORLD TRADE CENTER BLDG, 29 ROUTE DE PRE-BOIS, CASE POSTALE 856, CH-1215 GENEVA, SWITZERLAND