A fully integrated CMOS tri-band ambient RF energy harvesting system for IoT devices

Document Type

Article

Publication Date

12-1-2023

Abstract

This article presents a fully integrated tri-band RF energy harvesting system (RFEH) in 65-nm CMOS technol-ogy. The system is designed to harvest ambient RF energies at 900 MHz, 1.9 GHz, and 2.4 GHz through a tri-band impedance matching network (IMN), cross-coupled differential-drive (CCDD) rectifier, and an output voltage monitoring circuit to limit the rectified output voltage to 3.3 V. The system achieves a power conversion efficiency (PCE) of over 30 % across all three frequency bands with a peak of 42.8 %. Furthermore, the system exhibits a peak sensitivity of-20 dBm at an output DC voltage of 1 V output.

Keywords

Radio frequency energy harvesting (RFEH), Tri-band, Multiband, Impedance matching network (IMN), Over-voltage limiter, CMOS

Divisions

sch_ecs

Funders

Collaborative Research in Engineering, Science and Technology Centre [Grant no. IF059-2022, MG024-2022, PV026-2020, T05C2-19]

Publication Title

IEEE Transactions on Circuits and Systems

Volume

70

Issue

12

Publisher

IEEE

Publisher Location

445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA

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