A reconfigurable CMOS stack rectifier with 22.8-dB dynamic range achieving 47.91% peak PCE for IoT/WSN application
Document Type
Article
Publication Date
10-1-2023
Abstract
This brief proposes a 900-MHz novel CMOS-reconfigurable stack rectifier (RSR) implemented in a three-stage cross-coupled differential rectifier (CCDR) for battery-assist Internet-of-Things (IoT)/wireless sensor network (WSN) applications. A three-mode RSR is incorporated for an extended dynamic range (DR) input power level with a 100-k Omega load, fabricated in the 130-nm CMOS. The realized RSR achieves a wide DR power conversion efficiency (PCE) by reducing the ON-resistance (RON) in the low-power zone (LPZ) achieved by reducing the threshold voltage (V-th) of the device and alternately increasing V-th in the high-power zone (HPZ) by implementing the proposed reconfigurable stack transistor technique along with the multithreshold voltage (MTV) technique. The circuit observes a measured result of 47.91% in peak PCE at an input power of -14 dBm by driving a 100-k Omega load. The proposed circuit also achieved 22.8 and 16.3 dB of DR with a PCE over 20% and 30%, respectively. Compared to other state-of-the-art designs, our work exhibits better DR and PCE.
Keywords
xCMOS stack transistor, Dynamic range (DR) power conversion efficiency (PCE), Multithreshold-voltage technique, Radio-frequency (RF) energy harvesting (EH), Reconfigurable rectifier, RF-DC converters
Divisions
sch_ecs
Publication Title
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume
31
Issue
10
Publisher
Institute of Electrical and Electronics Engineers
Publisher Location
445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA