A reconfigurable CMOS stack rectifier with 22.8-dB dynamic range achieving 47.91% peak PCE for IoT/WSN application

Document Type

Article

Publication Date

10-1-2023

Abstract

This brief proposes a 900-MHz novel CMOS-reconfigurable stack rectifier (RSR) implemented in a three-stage cross-coupled differential rectifier (CCDR) for battery-assist Internet-of-Things (IoT)/wireless sensor network (WSN) applications. A three-mode RSR is incorporated for an extended dynamic range (DR) input power level with a 100-k Omega load, fabricated in the 130-nm CMOS. The realized RSR achieves a wide DR power conversion efficiency (PCE) by reducing the ON-resistance (RON) in the low-power zone (LPZ) achieved by reducing the threshold voltage (V-th) of the device and alternately increasing V-th in the high-power zone (HPZ) by implementing the proposed reconfigurable stack transistor technique along with the multithreshold voltage (MTV) technique. The circuit observes a measured result of 47.91% in peak PCE at an input power of -14 dBm by driving a 100-k Omega load. The proposed circuit also achieved 22.8 and 16.3 dB of DR with a PCE over 20% and 30%, respectively. Compared to other state-of-the-art designs, our work exhibits better DR and PCE.

Keywords

xCMOS stack transistor, Dynamic range (DR) power conversion efficiency (PCE), Multithreshold-voltage technique, Radio-frequency (RF) energy harvesting (EH), Reconfigurable rectifier, RF-DC converters

Publication Title

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Divisions

sch_ecs

Volume

31

Issue

10

Publisher

Institute of Electrical and Electronics Engineers

Publisher Location

445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA

This document is currently not available here.

Share

COinS