Electric and optoelectronic balances of silicon photodetectors coupled with colloid carbon nanodots
Document Type
Article
Publication Date
4-1-2023
Abstract
We present the efficient ultraviolet photodetectors made with the incorporation of colloid carbon nanodot (CCND) layers with silicon substrates. By investigating the morphologies, microstructure, light absorption and carrier dynamics, the control over CCND thickness is envisioned for the improvement of photosensing charac-teristics. We find that 35-nm thick CCNDs coupled with Si can reach remarkable sensing responsivity of 15.9 A/ W and detectivity of 2.94 x 1014 Jones under detecting lights with wavelength of 352 nm. The underlying mechanism is interpreted by the synergetic contributions from reduced dynamic dark currents and efficient charge separation from CCND/Si heterojunction.
Keywords
Colloid nanodots, Surfaces, Photodetectors, Optical properties
Divisions
nanocat
Funders
Bureau of Energy, Ministry of Economic Affairs, Republic of Taiwan [Grant No: 111-S0102],Ministry of Science and Technology of Taiwan [Grant No: MOST 110-2223-E-006-003-MY3]
Publication Title
Materials Letters
Volume
336
Publisher
Elsevier
Publisher Location
RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS