Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
Document Type
Article
Publication Date
3-1-2021
Abstract
To produce a deep green (530 nm-570 nm) LED, the suitable indium (In) composition in the InxGa1-xN/GaN multi-quantum well (MQW) structure is crucial because a lower indium composition will shift the wavelength of emission towards the ultraviolet region. In this paper, we clarify the effects of an indium-rich layer to suppress such blue shifting, especially after the annealing process. According to characterizations by the uses of XRD and TEM, narrowing of the MQW layer was observed by the indium capping, while without the capping, the annealing results in a slight narrowing of MQW on the nearest layer to the p-type layer. By adding an indium capping layer, the blue shift of the photoluminescence was also suppressed and a slight red shift to keep green emission was observed. Such photoluminescence properties were consistent with the tiny change of the MQW as seen in the XRD and TEM characterizations. (c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Keywords
Indium pre-flow, Deep green LED, Ultraviolet region, Annealing process
Divisions
Education,Science
Funders
Dynamic Alliance for Open Innovation Bridging Human, Environmental and Materials from MEXT,Universiti Malaya [Grant No: RP039A-18AFR],Ministry of Education, Malaysia [Grant No: 203/CINOR/6720013 & LR001A-2016A]
Publication Title
Optical Materials Express
Volume
11
Issue
3
Publisher
Optical Society of America
Publisher Location
2010 MASSACHUSETTS AVE NW, WASHINGTON, DC 20036 USA