Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient
Document Type
Article
Publication Date
1-1-2021
Abstract
ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500°C for 15 min. The effects of post-oxidation annealing temperature (400°C–800°C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer substrate have been systematically investigated. Chemical and structural properties of the films were characterized by X-ray diffractometer system, X-ray photoelectron spectrometer, Raman spectrometer, and optical microscopy. Metal-oxide-semiconductor capacitors have been constructed to test the leakage current through the oxide film by current–voltage measurements. The optimal annealing temperature for ZrO2/Ge structure is reported to be at 600°C. With the analysis of the characterized results, the surface and interface characteristics of annealed ZrO2/Ge structure has with a post oxidation annealing mechanism has been suggested. © 2021 Elsevier B.V.
Keywords
interface, thin film, oxide, argon, annealing
Divisions
fac_eng
Funders
Ministry of Science, Technology and Innovation (MOSTI), Malaysia via ScienceFund (03-01-03-SF1083),University of Malaya via Faculty Research Grant (GPF017A-2018),Southeast Asia – Taiwan Universities (SATU) Joint Research Scheme (ST016-2020)
Publication Title
Surfaces and Interfaces
Volume
23
Publisher
Elsevier