Enhancement in structural and electroluminescence properties of green light emission for semipolar (11-22) ingan/gan based grown on m-plane sapphire via Low Temperature Ammonia Treatment (LTAT)
Document Type
Article
Publication Date
9-1-2022
Abstract
Research on enhancement green light emitter is important to obtain a perfect red-green-blue (RGB) induced white light source. Unfortunately the present of mixed phase in deposition of InGaN/GaN limited the potential LED efficiency. Therefore, we introduce a new method called as Low Temperature Ammonia Treatment (LTAT) to eliminate the mixed phase and to enhance the structure properties of InGaN/GaN. Two samples have been prepared, with LTAT (LED A) and without LTAT (LED B). Both samples have been characterized using optical microscope (OM), Atomic Force Microscope (AFM), X-ray rocking curve (XRC) and Electroluminescence (EL). On the structural characterization, the OM results show the present 3D island on LED B sample while sample LED A only shows 2D surface. The RMS surface roughness from AFM are 10.3 +/- 0.4 nm and 13.5 +/- 10.7 nm for LED A and LED B respectively. XRC analysis proved the LED A with LTAT has a homogenous XRD curve while LED B without LTAT has a mixed phase. The BSFs streak length measured as 1.42 nm(-1) and 1.61 nm(-1) for LED A and LED B respectively shows low crystallographic defect in LED A compared to LED B. For the EL characteristic, LED A shows a single sharp peak near 538.2 nm wavelength, while LED B shows a broad multi-peak profile at 435.7 nm, 480.6 nm and 520.5 nm. The single sharp peak shows enhancement in green light emission when LTAT is applied during deposition. Successful enhancement is structural and electroluminescence properties shows the effectiveness of LTAT proposed in this work for perfect RGB.
Keywords
Semipolar (11-22), InGaN/GaN, Low temperature ammonia treatment (LTAT), Green emission, Effective V/III
Divisions
Science
Funders
Malaysia Ministry of Higher Education (MoHE) [LR001A-2016A],Collaborative Research in Engineering, Science and Technology Center (CREST) [PV015-2015] [T13C2-17/PV007-2019]
Publication Title
Photonics
Volume
9
Issue
9
Publisher
MDPI
Publisher Location
ST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND