Dual-band doherty power amplifier with improved reactance compensation

Document Type

Article

Publication Date

1-1-2021

Abstract

In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43 and 47, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. © 2021 Institute of Advanced Engineering and Science. All rights reserved.

Keywords

Doherty, Dual-band, Power amplifier

Publication Title

Indonesian Journal of Electrical Engineering and Computer Science

Divisions

sch_ecs

Funders

None

Volume

23

Issue

3

Publisher

Institute of Advanced Engineering and Science

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