Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

Document Type

Article

Publication Date

1-1-2021

Abstract

A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were studied by varying the aluminium nitride nucleation layer growth temperature at 700°C, 800°C, 900°C, 1000°C and 1100°C, respectively. The compressive strain inside the as-deposited aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was investigated through Raman spectroscopy by focusing on the evolution of E2 (high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively. © 2021, The Minerals, Metals & Materials Society.

Keywords

Aluminium nitride, induced strain, luminescence defect, MOCVD, oxygen impurities, pulsed atomic-layer epitaxy

Publication Title

Journal of Electronic Materials

DOI

10.1007/s11664-021-08768-0

Funders

OSRAM Opto Semiconductor SDN BHD,Ministry of Higher Education (MOHE) Long Term Research Grant Scheme (LRGS) under project no: LR001A-2016A,CREST Gallium Nitride on Gallium Nitride Collaboration (PV015-2015)

Volume

50

Issue

4

First Page

2313

Last Page

2322

Publisher

Springer

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