Characterization of microwave photoswitch integrating Metal-Semiconductor-Metal photodetector
Document Type
Article
Publication Date
10-1-2020
Abstract
An experimental study implemented to present the results of the characterization of microwave photoswitches to recognize the behavior of the microwave signals under laser light of 0.85 mu m wavelength. These photoswitches consist of a coplanar line integrating a Schottky contact Metal-Semiconductor-Metal (MSM) photodetectors in the central line growth on GaAs Not Intentionally Doped (N.I.D). Those MSM photodetectors have a single electrode of different finger spacings (D) ranging from 0.2 mu m to 1 mu m and different finger widths (L) ranging from 0.2 mu m to 5 mu m. The characterizations of our optoelectronic devices made in the absence of illumination allowed us good isolation equal to -40 dB and under illumination insertion losses equal to -12.7 dB at 20 GHz. The obtained results are quite satisfying, have permitted to deduce the On/Off ratios and allowed to see the influence of the geometrical parameters on the transmission and reflection coefficients.
Keywords
Microwave photoswitch, Coplanar waveguide (CPW), GaAs Metal-Semiconductor-Metal (MSM) photodetector, S-parameters, On/Off ratio
Divisions
PHYSICS
Funders
DGRSDT
Publication Title
Optik
Volume
220
Publisher
Elsevier
Publisher Location
HACKERBRUCKE 6, 80335 MUNICH, GERMANY