Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon
Document Type
Article
Publication Date
1-1-2016
Abstract
The Cu2Zn1−xCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1−xCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SEM). The optical properties studied through photoluminescence technique, indicated that the band gap is shifted as Cd content increases from 1.84 eV at x = 0 to 1.76 eV at x = 1. The electrical characterization of the Ag/n-PS/Cu2Zn1−xCdxSnS4/Ag diode through current to voltage (I–V) characterization shows the highest photo-response of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.
Keywords
Energy gap, Nanostructures, Optical properties, Porous silicon, Scanning electron microscopy, X ray diffraction, Zinc
Publication Title
Microsystem Technologies
Divisions
nanocat
Funders
University Malaysia Perlis for Grant Nos. 9007-00111 and 9007-00185,U. G. C., New Delhi, India: financial assistance in the form of Major Research Project [Code: 42-856/2013(SR)],CENTEM PLUS (LO1402) by financial means from the Ministry of Education, Youth and Sports under the “National Sustainability Programme I”
Volume
22
Issue
12
Publisher
Springer Verlag (Germany)