Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon
Document Type
Article
Publication Date
1-1-2016
Abstract
The Cu2Zn1−xCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1−xCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SEM). The optical properties studied through photoluminescence technique, indicated that the band gap is shifted as Cd content increases from 1.84 eV at x = 0 to 1.76 eV at x = 1. The electrical characterization of the Ag/n-PS/Cu2Zn1−xCdxSnS4/Ag diode through current to voltage (I–V) characterization shows the highest photo-response of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.
Keywords
Energy gap, Nanostructures, Optical properties, Porous silicon, Scanning electron microscopy, X ray diffraction, Zinc
Divisions
nanocat
Funders
University Malaysia Perlis for Grant Nos. 9007-00111 and 9007-00185,U. G. C., New Delhi, India: financial assistance in the form of Major Research Project [Code: 42-856/2013(SR)],CENTEM PLUS (LO1402) by financial means from the Ministry of Education, Youth and Sports under the “National Sustainability Programme I”
Publication Title
Microsystem Technologies
Volume
22
Issue
12
Publisher
Springer Verlag (Germany)