Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects
Document Type
Article
Publication Date
1-1-2020
Abstract
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34. While the pristine GaN 2D structures are intrinsically semiconducting, the 2D GaN with VGa defects under tensile/compressive biaxial strains is metallic, except at a high compressive strain of 6%. In addition, the 2D GaN exhibits a strain-tunable magnetic property by introducing the VGa defects, where the magnetic moment can be modulated by applying a biaxial strain on the material. A compressive strain larger than 2% tends to suppress the magnetic effect. A drastic reduction of the total magnetization from 2.21 μ B to 0.16 μ B is clearly visible for a lower VGa concentration of θ = 1 / 62. On the other hand, the 2D GaN with VN defects is nonmagnetic, and this behavior is not affected by the biaxial strain. © 2020 Author(s).
Keywords
Phosphorus, Electronic properties, Blue phosphorene
Publication Title
Journal of Applied Physics
Divisions
PHYSICS
Funders
Data Intensive Computing Centre (DICC), University of Malaya and financial support from MOHE under Grant No. FRGS/1/2017/ STG07/UTAR/02/2,USM Bridging Fund (2018),UM Research (Grant No. GPF041B-2018)
Volume
127
Issue
1
Publisher
AIP Publishing