A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique
Document Type
Article
Publication Date
1-1-2020
Abstract
This article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order derivative transconductance component ({g}''m) is reduced by tailoring toward the optimum biasing point at the moderate-inversion region. Second, the generated IM3 current by the first-order derivative transconductance ({g}'m) due to the interaction with the feedback component in the ISD transconductor is attenuated by second-harmonic injection via the bulk of the ISD transconductor. Furthermore, a transformer-based gate inductor and a transformer-based balun are applied to improve the input impedance matching and produce a balanced differential input signal. Measured results in 0.13- μ m CMOS show a high IIP3 of +16 dBm and a conversion gain (CG) of 22 dB at 2.4 GHz. The double-sideband (DSB) noise figure (NF) is 7.2 dB, and the power consumption is 3.15 mW at 1.2 V. © 1993-2012 IEEE.
Keywords
Balun-low-noise amplifier (LNA) mixer, CMOS, high linearity, inductively source degeneration transconductor, low-power, second-order intermodulation (IM2) injection, third-order input intercept point (IIP3), Volterra series
Divisions
fac_eng
Funders
Macao Science and Technology Development Fund through the SKL Fund,University of Macau under Grant MYRG2017-00185-AMSV,Motorola Solution Foundation under Grant IF017-2016
Publication Title
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume
28
Issue
3
Publisher
Institute of Electrical and Electronics Engineers