Nanosecond pulse generation with a gallium nitride saturable absorber
Document Type
Article
Publication Date
1-1-2019
Abstract
A mode-locked nanosecond Erbium-doped fiber laser (EDFL) was demonstrated using gallium nitrate (GaN) in the form of a polished crystal as a saturable absorber (SA). The GaN film exhibited a modulation depth of 2% with a saturable optical intensity of 0.46 MW/cm2. The laser directly produced nanosecond pulses with stable mode-locking operation at a pump threshold of 149.51 mW. The generated output pulses operated at a 1562 nm central wavelength with a pulse duration and a repetition rate of 485 ns and 967 kHz, respectively. The average output power was 3.068 mW at a pump power of 182.34 mW, corresponding to 3.1 nJ single pulse energy. These results indicate that GaN material has a promising application in ultrafast light generation. © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Keywords
Fiber lasers, Gallium nitride, III-V semiconductors, Locks (fasteners), Mode-locked fiber lasers, Optical pumping, Pulse repetition rate
Divisions
PHYSICS,photonics
Funders
Ministry of Education (Grant No: LR001A-2016A),University of Malaya (Grant No: RP039C-18AFR)
Publication Title
OSA Continuum
Volume
2
Issue
1
Publisher
OSA - The Optical Society