Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique
Document Type
Article
Publication Date
1-1-2019
Abstract
A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV) powers. The uneven and even distribution of the current-voltage I-V curve in the negative and positive bias regions indicate substantial dual characteristics in the fabricated device. A high responsivity of about 9.6 and 0.388 AW−1 is measured at the negative and positive bias regions respectively, allowing the p-Si/MoS2 p-n heterojunction PD to operate at UV powers lower than 830 μW. © 2019 Elsevier GmbH
Keywords
Molybdenum disulfide, Dual characteristics, Responsivity, Photodetector, Ultraviolet
Divisions
photonics
Funders
Ministry of Higher Education (MoHE), Malaysia under grants LRGS (2015) NGOD/UM/KPT and GA 010-2014 (ULUNG),University of Malaya under the grants RU 013-2018
Publication Title
Optik
Volume
188
Publisher
Elsevier