Broadband high responsivity large-area plasmonic-enhanced multilayer MoS2 on p-type silicon photodetector using Au nanostructures
Document Type
Article
Publication Date
1-1-2019
Abstract
High responsivity, large-area plasmonic-enhanced nanostructure photodetector based on multilayer (ML) molybdenum disulfide (MoS2) deposited on p-type Silicon (Si) substrates is reported. A large area ML-MoS2 is deposited onto the Si photodetector (PD) using a modified membrane filtration method. This large area ML-MoS2 and Au NSs on the p-Si form a cavity-like structure that dramatically enhances the incident light path. The increase of incident light path due to light trapping effect enhances the electron-hole pair generation tremendously. The plasmonic-enhanced ML MoS2 on Si PD has achieved a stable and repeatable photoresponse up to 37 A W-1, whereas the detectivity is around 1012 Jones at the broad wavelengths (405-780 nm) with a modulation frequency of 1 kHz. The enhancement of photoresponsivity is 8, 5.3 and 11 times with 5 V bias at an incident wavelength of 405 nm, 650 nm and 780 nm respectively as compared to the bare p-Si PD. The experimental results also show that the plasmonic-enhanced ML-MoS2 on Si PD exhibited fast photoresponse (rise time of ∼1 μs and fall time of ∼18 μs), which is much higher compared to typical transition metal dichalcogenide PD or single layer MoS2 based PD. These excellent performances show that the plasmonic-enhanced MoS2 structure is highly potential to apply in Si photovoltaics, visible range photodetection, and visible bio/chemical sensing application. © 2019 IOP Publishing Ltd.
Keywords
light trapping, nanostructured materials, optical surface waves, Photodetectors
Divisions
photonics
Publication Title
Materials Research Express
Volume
6
Issue
10
Publisher
IOP Publishing