Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
Document Type
Article
Publication Date
1-1-2018
Abstract
The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.
Keywords
Chemical analysis, Crystallite size, Germanium oxides, Oxidation, Spectrometers, Substrates, Thin films, X ray powder diffraction, Zirconia
Divisions
fac_eng
Funders
Frontier Research Grant (FRG) (Grant No.: FG008-17AFR),Postgraduate Research Grant (PPP) (Grant Nos.: PG221-2015B and PG031-2016A) via University of Malaya (UM),ScienceFund (Grant No.: 03-01-03-SF1083) via Ministry of Science, Technology and Innovation (MOSTI), Malaysia
Publication Title
Journal of Materials Science: Materials in Electronics
Volume
29
Issue
15
Publisher
Springer