High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor
Document Type
Article
Publication Date
1-1-2016
Abstract
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.
Keywords
Macroporous materials, Ionic conductivity, pH sensitivity
Divisions
PHYSICS
Funders
Universiti Kebangsaan Malaysia (UKM): Short-term grant number DIP 2014-023 (UKM)
Publication Title
Sensors
Volume
16
Issue
6
Publisher
MDPI