High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor
Document Type
Article
Publication Date
1-1-2016
Abstract
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.
Keywords
Macroporous materials, Ionic conductivity, pH sensitivity
Publication Title
Sensors
Divisions
PHYSICS
Funders
Universiti Kebangsaan Malaysia (UKM): Short-term grant number DIP 2014-023 (UKM)
Volume
16
Issue
6
Publisher
MDPI