Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
Document Type
Article
Publication Date
1-1-2018
Abstract
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
Keywords
CuAlO2, heat harvesting, oxides, pulsed laser deposition, thermoelectrics, thin films
Divisions
fac_med
Publication Title
Journal of Materials Engineering and Performance
Volume
27
Issue
12
Publisher
Springer Verlag (Germany)
Additional Information
Adam Malik Ismail. Master of Pathology (University of Malaya)