A new approach to study the effect of generation rate on drain-source current of bilayer graphene transistors
Document Type
Article
Publication Date
1-1-2016
Abstract
This paper presents a new approach to study the effect of impact ionization on the current of bilayer graphene field effect transistors. Analytical models for surface potential and current together with a Monte Carlo approach which include the edge effect scattering are used to calculate the current and generation rate in bilayer graphene transistors due to ionization. FlexPDE simulation is also employed for verification of surface potential modeling. Using the approach, the profile of generation rate, surface potential and current are plotted with respect to several structural parameters. We have shown that ignoring this effect in the modeling will result in an error of up to 10 % for a typical 30 nm bilayer graphene field effect transistor. As a result, we conclude that any analytical study ignoring the ionization is incomplete for bilayer graphene field effect transistors. The model presented here can be applied in optimization of photo detectors based on graphene.
Keywords
Graphene, Field effect transistor, Carrier generation, Modelling, Monte Carlo, Graphene photo detector
Divisions
Science
Funders
University of Malaya: LRGS(2015) NGOD/um/KPT, RP029A-15AFR, RU007/2015 and GA010-2014(ulung)
Publication Title
Indian Journal of Physics
Volume
90
Issue
10
Publisher
Springer Verlag (Germany)