A High-Efficiency Ultra-Broadband Mixed-Mode GaN HEMT Power Amplifier
Document Type
Article
Publication Date
1-1-2018
Abstract
In this brief, a new technique of efficiency enhancement of ultra-broadband RF power amplifier with simple load network approach is introduced, in which a combination of the reactance compensation and third-harmonic tuning is developed with design equations. The fabricated prototype board of the mixed mode power amplifier demonstrated 10 W output power over a wide frequency band of 0.4-2.0 GHz with an efficiency greater than 62% and observes good agreement between simulation and measured output. This implementation is suitable for two-way radio product applications.
Keywords
efficiency, GaN HEMT, lumped elements, reactance compensation, RF power amplifier
Divisions
fac_eng
Funders
CREST, Malaysia,Motorola Solutions under Grant PV007-2015; in part by funding from PV006-2016 for technical support
Publication Title
IEEE Transactions on Circuits and Systems II: Express Briefs
Volume
65
Issue
12
Publisher
Institute of Electrical and Electronics Engineers