Document Type
Article
Publication Date
1-1-2011
Abstract
(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666021]
Keywords
BA0.96CA0.04TI0.84ZR0.16O3 Thin-Films, Piezoelectric Properties, Dielectric-Constant, Devices
Divisions
PHYSICS
Publication Title
Applied Physics Letters
Volume
99
Issue
23
Publisher
AIP Publishing
Additional Information
Department of Physics, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA