Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates
Document Type
Article
Publication Date
5-1-2013
Abstract
This work utilizes simultaneous thermal oxidation and nitridation technique to transform sputtered Zr to ZrO2 and to Zr-oxynitride thin films on Si and SiC substrates, respectively, in nitrous oxide gas ambient. Various characterization techniques such as X-ray photoelectron spectroscopy, energy-filtered transmission electron spectroscopy, atomic force microscopy, X-ray diffraction, capacitance–voltage measurements, and leakage current density-electric field measurements were carried out to evaluate and compare the structural, chemical, and electrical properties of the films produced on both Si and SiC substrates.
Keywords
Thin film, Oxide, D. Nitride
Divisions
fac_eng
Publication Title
Ceramics International
Volume
39
Issue
Spp. 1
Publisher
Elsevier
COinS