Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

Document Type

Article

Publication Date

1-1-2011

Abstract

The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.

Keywords

Oxidation, Sputtered-Zr, Nitrous oxide, Band alignment, Electrical breakdown field

Divisions

fac_eng

Publication Title

Nanoscale Research Letters

Volume

6

Issue

489

Publisher

SpringerOpen

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