ZrO2 thin films on Si substrate

Document Type

Article

Publication Date

10-1-2010

Abstract

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.

Keywords

ZrO2, Thin films, Si substrate

Publication Title

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

Divisions

fac_eng

Volume

21

Issue

10

Publisher

Kluwer (now part of Springer)

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