ZrO2 thin films on Si substrate
Document Type
Article
Publication Date
10-1-2010
Abstract
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.
Keywords
ZrO2, Thin films, Si substrate
Divisions
fac_eng
Publication Title
Journal of Materials Science: Materials in Electronics
Volume
21
Issue
10
Publisher
Kluwer (now part of Springer)