Direct synthesis of β-silicon carbide nanowires from graphite only without a catalyst
Document Type
Article
Publication Date
1-1-2010
Abstract
One-dimensional (1D) β-SiC nanowires were successfully fabricated on bare Si (1 0 0) substrate using simple carbo-thermal evaporation of graphite at 1200 °C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 and 500 nm. The majority of crystal planes were β-SiC (1 1 1) with other less intensity of (2 0 0), (2 2 0) and (3 1 1). The silicon substrate location inside the furnace found to be critical in the formation of the β-SiC nanowires. Also, introducing oxygen gas as an ambient gas instead of argon reduces the growth at locations close to the graphite source.
Keywords
β-SiC Carbo-thermal, Nanowires Ambient gas, Crystal planes, Direct synthesis Oxygen gas, Silicon carbide nanowires, Silicon substrates Argon, Graphite, Location Oxygen, Silicon carbide, Thermal evaporation
Divisions
PHYSICS
Funders
Institute of Research Management and Consultancy, University Malaya, under grant no. PS2007/118B
Publication Title
Journal of Alloys and Compounds
Volume
497
Issue
1-2
Publisher
Elsevier