Properties of a-C:H films deposited in CH4 H2 and CH4he DC plasma
Document Type
Article
Publication Date
1-1-2009
Abstract
Hydrogenated amorphous carbon (a-C:H) films were deposited using direct-current plasma enhanced chemical vapor deposition (DC PECVD) process. The resulting film properties were studied with respect to the introduction of hydrogen (H2) and helium (He) in methane (CH4) plasma. The analysis techniques used to assess the film properties included optical transmission spectroscopy, Fourier transmission infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. Hydrogen dilution has significant effect on the deposition rate and optical band gap (Eg) of the film but helium dilution produces insignificant effects on these parameters. However, the hydrogen content in the film decreases steeply to a saturation value with increase in helium dilution. Increase in dilution of CH4 by both H and He gases result in decrease in PL efficiency. © 2009 World Scientific Publishing Company.
Keywords
A-C:H Eg FTIR Hydrogen and helium dilution PL a-C:H films Analysis techniques DC plasma Direct-current Eg Film properties Fourier Helium dilution Hydrogen contents Hydrogen dilution Hydrogenated amorphous carbon (a-C:H) Optical transmission spectroscopy PL efficiency Saturation values Amorphous carbon Amorphous films Carbon films Dilution Fourier transform infrared spectroscopy Helium Hydrogen Methane Optical films Plasma deposition Plasma diagnostics Plasmas Radioactivity Plasma enhanced chemical vapor deposition
Divisions
PHYSICS
Publication Title
International Journal of Nanoscience
Volume
8
Issue
1-2